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Creators/Authors contains: "Aglagul, Denis"

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  1. ; (, Applied Physics Letters)
    We present theoretical observations on the topological nature of strained III–V semiconductors. By k·p perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers–Weyl node at the Γ point. It is theoretically shown that a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions. 
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    Free, publicly-accessible full text available February 24, 2026
  2. ; ; ; ; ; ; (, Review of Scientific Instruments)
    We present a simple approach to characterize the spatial variation of the gain in microchannel plate (MCP) coupled to phosphor detectors using single electron or photon hits. The technique is easy to implement and general enough to be extended to other kinds of detectors. We demonstrate the efficacy of the approach on both laboratory and Monte Carlo generated datasets. Furthermore, we use the approach to measure the variation in gain over time as the MCP is exposed to an increasing number of electrons. 
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